********************************
* Copyright:                   *
* Vishay Intertechnology, Inc. *
********************************
*May 05, 2014
*ECN S14-0981, Rev. B
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product datasheet. Designers should refer to the
*appropriate datasheet of the same number for guaranteed specification
*limits.
*This document is intended as a SPICE modeling guideline and does not
*constitute a commercial product data sheet.  Designers should refer to the
*appropriate data sheet of the same number for guaranteed specification
*limits.
.SUBCKT Si8461DB D G S 
M1 3 GX S S PMOS W= 828000u L= 0.25u 
M2 S GX S D NMOS W= 828000u L= 4.972e-07 
R1 D 3 1.000e-05 2.415e-01 4.573e-04 
CGS GX S 8.799e-11 
CGD GX D 8.225e-12 
RG G GY 6.5 
RTCV 100 S 1e6 -4.202e-04 -5.723e-07 
ETCV GY GX 100 200 1 
ITCV S 100 1u 
VTCV 200 S 1 
DBD D S DBD 
**************************************************************** 
.MODEL PMOS PMOS ( LEVEL = 3 TOX = 1.7e-8 
+ RS = 8.799e-02 KP = 1.058e-05 NSUB = 1.178e+14 
+ KAPPA = 1.01e-04 ETA = 4.185e-07 NFS = 3.689e+11 
+ LD = 0 IS = 0 TPG = -1) 
*************************************************************** 
.MODEL NMOS NMOS ( LEVEL = 3 TOX = 1.7e-8 
+NSUB = 5.290e+16 IS = 0 TPG = -1 ) 
**************************************************************** 
.MODEL DBD D ( 
+FC = 0.1 TT = 2.000e-07 TREF = 25 BV = 22 
+RS = 1.000e-01 N = 1.159e+00 IS = 1.863e-09 
+EG = 8.578e-01 XTI = 2.628e-01 TRS = 2.403e-03 
+CJO = 1.020e-10 VJ = 2.215e-01 M = 2.994e-01 ) 
.ENDS 
